Study on characteristics of ITiO films by room temperature deposition and excimer laser annealing

ITiO film was deposited by the methods of room temperature magnetron sputtering and annealed by the XeCl excimer laser in vacuum.The optic,electronic characteristics and phase structure were tested by spectrophotometer,hall-effect testing instrument and X-ray diffractometer respectively.The result show that,irradiation by excimer laser with power of 100-150mJ/cm2 can convert the thin film from the amorphous state to a polymorphic state,activate the doped Ti atoms,and decrease the resistivity of the film.In addition,improve the laser power can reduce the carrier concentration and make the transmittance increase.By the excimer laser annealing of 150mJ/cm2,the resistivity of the ITiO film was 6.93×10-4Ω·cm,and transmittance can reach 88.4%.