article·1999-01-01Open access

Study on the Relationship between the Thermal Properties of CuNiSi Thin Films and Adding Amount of Rare Earth Elements

Wang Jiami, H Zhang

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Abstract

In this paper, the photothermal radiometry (PTR) and optical beam defleCtion (OBD-mirage effect) were used to study the re-lationship between the thermal properties of CuNiSi thin films and the amount of rare earth elements adding to the target materials. The re-Sults show that the addition of lanthanide element mixture causes the difference in the thermal behavior of the thin films. The thermal diffu-sivity a increases with the increase of the amount of rare earth elements adding to the targets. Meanwhile the increasing of adding amount of rare earth elements lead to the decrease of the resistivity and temperature coefficient of resistance of the thin films. The change trend of the resistivity is in conformity with the change of thermal diffusivity of the thin films.
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Research context

OpenAlex topics: Semiconductor materials and interfaces · Electronic Packaging and Soldering Technologies · Chalcogenide Semiconductor Thin Films

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