The Photoluminescence Property of Nanocrystallite Silicon Films Prepared by Electron Beam Recrystallization
Source abstract
Abstract
The nanocrystallite silicon films were successfully prepared by using the electron beam to recrystallize hydrogened amorphoussilicon films. Two efficient photoluminescence (PL) bands in these samptes, red-band and blue-band, were observed at room temperature. Their peats were around 1. 7eV and 2. 5eV respectively. The PL and XRD resutts indicated that the intensity of band and the rabo ofband to entire PL sPectroscope varied with the crystallinity in the film. ln our experiments, the samples recrystallized at power density of2. 7W/cm2 demonstrated a high PL spectroscope
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Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Silicon Effects in Agriculture · Thin-Film Transistor Technologies
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