The performance of Ge_2Sb_2Te_5 material and nonvolatile phase-change-memory device

The performance of nonvolatile phase-change-memory material Ge_2Sb_2Te_5 and its device cell was investigated.The effect of the annealing temperature on the resistivity and crystal structure of the Ge_2Sb_2Te_5 film were studied.It was found that the film has two different decrease speed of the resistivity with the increasing temperature.The XRD spectra show the resistivity of the Ge_2Sb_2Te_5 film depend on the crystal structural changes.The hall measurement shows the hole mobility decreased with the changing of film thickness from 100nm to 10nm and the film is positive temperature coefficient.The DC I-V curve of the electrically rewritable phase-change-memory cell was measured.The conductivity mechanism of cell in the crystalline and amorphous state was analyzed.