Influence of annealing temperature on the structure of Ge-SiO_2 thin films

Ge SiO 2 thin films were deposited on p type Si substrates using the radio frequency (rf) magnetron sputtering technique with a Ge SiO 2 composite target. Thermal annealing was performed in a controlled N 2 ambience at different temperature. The microstructure was studied by XRD,XPS and FTIR. It was showed that the amount of the GeO and the average size of the Ge nanocrystals was dependent on annealing temperature. And the detail was discussed.