The contact and temperature characteristics of ZnO /P-Si

Al-doped zinc-oxide(ZnO∶Al) films are obtained by RF magnetron sputtering.Based on an investigation of electrical properties of the films using I-V-T measurement,it is shown that the ZnO contact with the Si substrate has a property of heterogeneity-junction.The mechanisms of the electric current transport in the heterogeneity-junction are thermoemission and tunnel.We have found the potential of ZnO/P-Si decrease by temperature fallen while the ideality factor increases by calculating the result obtained through I-V-T measurement.This abnormal behavioral of heterogeneity-junction can be explained by Schottky potential asymmetrical.Compared with unanneal samples,the samples annealed in Air～800℃ have a higher potential.It has show that anneal can improve the quality of the ZnO films,and reduce the effect of interface state.