Temperature Dependence of Dielectric Properties in BaTiO_3 Based X7R Materials Doped with CeO_2

The temperature dependence of dielectric properties of X7R materials based on CeO 2,Nb 2O 5 and Co 2O 3 co-doped BaTiO 3 was discussed.In the whole temperature range of X7R specification,the system expressed characteristics of high dielectric constant (4000),stableness and low dielectric loss (2.0%).Increasing of CeO 2 amount caused a higher dielectric constant and its variation rate.A properly higher presintering temperature was helpful to form a more stable temperature dependence of dielectric constant,and multi-peak effect was exhibited.The system can be sintered at a rather low temperature as 1220～1240℃.