Study on Deposition of AlN Thin Films at Low Substrate Temperature with KrF Excimer Pulsed Laser
Source abstract
Abstract
AlN thin films with dominant crystalline structure were prepared on Si(111) substrate at low temperature (200℃) with a KrF excimer pulsed laser by varying the deposition conditions.And the forming of AlN phases were precluded by the long time and high temperature in heat treatment after the deposition.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · Acoustic Wave Resonator Technologies
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