Computer simulation of sputtering of target and transportation of sputtered atoms

Sputtering of target and transportation of sputtered atoms are simulated with software SRIM and Monte Carlo method. The results of simulation include energies, incidence angles and positions of sputtered atoms on arriving substrate. It can be get that transportation of sputtered atoms is affected greatly by P×d (P is gas pressure in vacuum, d is distance between target and substrate), the bigger the value of P×d, the fewer the number of atoms arriving substrate, and the smaller the energies of them; The energies of sputtered atoms on arriving substrate concentrate upon several eV with another distribution peak in very low energy area; Angle distribution concentrates upon the vertical direction, which was as that of atoms sputtered from the target, but was reduced in comparison; Incidence position distribution becomes more uniform and the distribution area extends in radial direction compared with those of atoms when sputtered from target. Incidence position distribution was limited within the range of target radius.