Effect of process parameters on bonds structure of GeSi films by hot-wire CVD

In this paper,effect of process parameters on bonds structure of GeSi films prepared by hot-wire CVD with high hydrogen dilution ratio is studied.Raman spectroscopy and Fourier transform Infrared spectroscopy are used to analyze the relative contents of nonpolar bonds(Ge—Ge,Ge—Si,Si—Si)and the relative contents of hydrogen bonds(Ge—H,Ge—H2,Si—H),respectively.It is found that effects of hot-wire temperature (Tw)and SiH4/GeH4ratio(RS/G)on nonpolar bonds and hydrogen bonds are different.Twand RS/Gboth have effects on relative content of nonpolar bonds.Relative contents of Ge—Si and Si—Si increase with Twincreasing.With RS/Gincreasing,relative content of Ge—Si increases but decreases when RS/G1.4,while relative content of Si—Si increases all through.But Twhas no effects on relative contents of nonpolar bonds while RS/G affects obviously.