Pyrolysis approach to GaN nanowires with VLS mechanism
Source abstract
Abstract
In this report,we describe a new route for synthesizing gallium nitride nanowires with high-purity and well crystallization by thermal decomposition reaction of complex GaCl_3 ·NH_3 in NH_3 atmosphere on Si wafers.The growth process of gallium nitride nanowires follows the VLS mechanism.The result products were characterized by XRD,HRTEM and EDS.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials
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