Growth of high quality c-axis-oriented AlN thin films by middle frequency sputtering

In the present paper, AlN thin films were deposited on Si(100) substrate by a middle frequency sputtering. And the grown AlN thin films were studied by X-ray diffraction, scanning electron microscope and Raman spectroscopy. The growth parameters, such as substrate-target spacing, sputtering power and N2 partial pressure, on the texture degree of the AlN thin film were investigated. The results reveal that higher sputtering power, shorter substrate-target spacing and lower N2 ratio is benefit to the formation of texture. Under optimum deposition conditions, high quality of AlN thin films was obtained. The full width at half maximum(FWHM) in rocking curve is 5. 7°, and the FWHM of E2(high) in Raman spectrum is only 13. 8cm-1.