Research on preparation of TaN diffusion barrier layer in ULSI(ultra large scale integration)Cu-metallization
Source abstract
Abstract
TaN barrier layer were prepared with using high vacuum magtreon sputtering method for ULSI Cu metallization.It was disscused that Experiments parameters such as temperature power and flowing ratio of argon to nitrogen effects on growth dynamics and surface microstructure.Good experiments conditions was given to get better TaN barrier film.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Copper Interconnects and Reliability · Metallurgy and Material Forming · Induction Heating and Inverter Technology
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