article·2011-01-01Open access

Transition energy of electrons in strained GaN/Al_xGa_(1-x)N quantum wells

Ha Si-Hua

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Abstract

Based on the numerical calculation of ordinary differential equations,the Schrdinger and Poisson equations are solved self-consistently to obtain the electron eigen-states by considering the built-in electric field,penetration effect,and boundary conditions of the quantum well structure.As an example,the eigen energy levels and transition energies of an electron in different GaN/AlxGa1-xN quantum wells were calculated.The results indicate that the energy of an electron in the quantum well is quantized,and the built-in electric field increases the separation between the energy levels of the electron.Different energy levels can be obtained and transition energies changed by adjusting the well width and Al component.
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OpenAlex topics: GaN-based semiconductor devices and materials

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