The effect of sintering temperature and period for nanocrystalline NASICON materials

A sol-gel process based on normal cheap reagents was utilized for the synthesis of nanocrystalline NASICON. The characterization of the resulted material indicated that the NASICON material with high phase purity could be synthesized at the sintering temperature of 800℃, while a good crystallinity and relatively high compacting density could be obtained by elevating the sintering temperature to 1000℃. The effect of the sintering temperature and period on the densification of the NASICON solid material was also analyzed and the result of impedance spectrum indicated that highly crystallized NASICON showed higher ionic conductivity and lower resistance.