Photoinduced character and the structure of La_(0.88)Te_(0.12)MnO_(3-δ)thin film

La_(0.88)Te_(0.12)MnO_(3-δ)thin film has been prepared on LaAlO_3(LAO)substrates by pulsed laser deposition method,the photoinduced resistivity change and clossal magnetoresistanee effect have been investigated.The results show that the film has a metal-insulator transition temperature T_(MI)of 278K and the maximum magneto- resistance ratio of 16.9% at 0.4T.Under laser irradiation,the resistivity increase below TMI,but there is a decrease above T_(MI).The maximum relative change in resistivity(LR %)is 13.2%.Since the laser photon ener- gy is larger than the band gap of the thin films,electron-hole pairs are created in the film.For the electrons can be captured by the oxygen vacancy easily,then extra holes carriers are produced,which can induce local insula- tor-metal phase change and photo-induced effect.