Sol-gel fabrication and dielectric properties of Li and Ti doped NiO thin films

Li-Ti-Ni-O dielectric thin films were successfully fabricated by sol-gel method on the SiO_2(1μm)/Si and Pt(350nm)/Ti(70nm)/SiO_2(1μm)/Si substrate.The morphology,microstructure as well as dielectric properties of Li-Ti-Ni-O thin films were investigated by optimizing the process condition including pyrolysis and annealing parameters.Li-Ti-Ni-O thin films consist of NiO and Li-Ni-O composite oxide when they were pyrolysis treated at 300～500℃ and annealed at 600～700℃.The film was about 300nm in thickness without cracks.The dielectric constant of Li-Ti-Ni-O thin film was about 767 at 100Hz and began to decrease with increasing frequency at more than 3000Hz.