Growth and characteristics of zinc oxide thin fil ms on silicon(111) by pulsed laser deposition

ZnOthin fil ms were deposited on n-Si(111) substrates by pulsed laser deposition(PLD).X-ray diffraction(XRD)showed that there was only one sharp diffraction peak at 2θ=34°with the full width at the half maxi mum(FWHM) of 0.75°.Fourier transforminfrared spectrophotometer(FTIR) presented a intensely cliffy absorption peak located at 414.92nm whichwas resulted fromZn—Obonds.Photoluminescence(PL) gave us twolight emission bands,corresponding to the wavelength of370 and 460nm.Scanning electron microscopy(SEM) and selected-area electron diffraction(SAED) were employed to analyzethe morphology and crystal lattice structure of ZnOthin fil ms.ZnOthin fil ms which had an excellentlyc-axis preferred orienta-tion and a hexagonal wurtzite structure were prepared.