Preparation of Cu2ZnSnS4-based thin film solar cells by a combustion method
Source abstract
Abstract
Abstract A novel route that fabricate Cu2ZnSnS4 solar cells by a combustion method has been successfully conducted. The probable formation mechanism of Cu2ZnSnS4 for metal oxides system during the sulfurization process is analyzed in detail through the phase analysis in several continuous temperature ranges in combination with thermodynamic calculation. The effects of annealing temperature on the structural, morphological, compositional and optical properties of absorber layer were studied. The UV–vis spectra revealed the band gap of as-prepared thin films varying from 1.48 to 1.34 eV along with rising the sulfurization temperature. It was found that secondary phase with narrow band gap significantly affects the band gap of Cu2ZnSnS4. The best performance of the Cu2ZnSnS4 thin film solar cells prepared by the combustion method achieved a powder conversion efficiency (PCE) of 1.6% with a short circuit current density of 10.5 mA/cm2 and an open circuit voltage of 505 mV. This low-cost non-vacuum technique has a promising application in synthesis of light-absorbing layers for photovoltaic devices, which can vastly reduce the costs and simplify the preparation process.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (38)
Show source-provided references
1. Development of CZTS-based thin film solar cells10.1016/j.tsf.2008.11.002 ↗
2. Enhanced conversion efficiencies of Cu2ZnSnS4-based thin film solar cells by using preferential etching technique10.1143/APEX.1.041201 ↗
3. Thin film solar cell with 8.4% power conversion efficiency using an earth-abundant Cu2ZnSnS4 absorber10.1002/pip.1174 ↗
4. Solution-based synthesis and characterization of Cu2ZnSnS4 nanocrystals10.1021/ja9044168 ↗
5. Novel solution processing of high-efficiency earth-abundant Cu2ZnSn(S,Se)4 solar cells10.1002/adma.201201785 ↗
6. A high efficiency electrodeposited Cu2ZnSnS4 solar cell10.1002/aenm.201100526 ↗
7. Preparation of Cu2ZnSnS4 thin films by sulfurizing sol-gel deposited precursors10.1016/j.solmat.2007.04.012 ↗
8. Influence of H2S concentration on the properties of Cu2ZnSnS4 thin films and solar cells prepared by sol–gel sulfurization10.1016/j.solmat.2011.05.050 ↗
9. A review on pulsed laser deposited CZTS thin films for solar cell applications10.1016/j.jallcom.2014.09.018 ↗
10. Fabrication of 7.2% efficient CZTSSe solar cells using CZTS nanocrystals10.1021/ja108427b ↗
11. Cu2ZnSn(S,Se)4 thin film absorbers based on ZnS, SnS and Cu3SnS4 nanoparticle inks: enhanced solar cells performance by using a two-step annealing process10.1016/j.solmat.2014.08.024 ↗
12. Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency10.1002/aenm.201301465 ↗
13. Powering the planet: chemical challenges in solar energy utilization10.1073/pnas.0603395103 ↗
14. Combustion synthesis of iron-substituted strontium titanate perovskites10.1016/S0025-5408(97)00117-7 ↗
15. Classification of lattice defects in the kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 earth-abundant solar cell absorbers10.1002/adma.201203146 ↗
16. On the formation mechanisms of Zn-rich Cu2ZnSnS4 films prepared by sulfurization of metallic stacks10.1016/j.solmat.2013.01.015 ↗
17. Cu2ZnSnSe4 thin film solar cells produced by selenisation of magnetron sputtered precursors10.1002/pip.886 ↗
18. Growth and characterization of Cu2ZnSn(S,Se)4 thin films for solar cells10.1016/j.solmat.2012.02.031 ↗
19. Rapid annealing of reactively sputtered precursors for Cu2ZnSnS4 solar cells10.1002/pip.2265 ↗
20. Fabrication of Cu2ZnSnS4 thin films using oxides nanoparticles ink for solar cell10.1016/j.jpowsour.2014.11.112 ↗
21. Synthesis of submicrometer titanium carbide powders10.1111/j.1151-2916.1997.tb02926.x ↗
22. Chemical insights into the instability of Cu2ZnSnS4 films during annealing10.1021/cm202379s ↗
23. A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursors10.1088/0022-3727/43/21/215403 ↗
24. Formation of Cu2SnS3 thin film by the heat treatment of electrodeposited SnS–Cu layers
25. Effects of the sulfurization temperature on sol gel-processed Cu2ZnSnS4 thin films10.1016/j.ceramint.2013.05.039 ↗
26. Structural development and dynamic process in sulfurizing precursors to prepare Cu2ZnSnS4 absorber layer10.1016/j.jallcom.2013.08.216 ↗
27. A detrimental reaction at the molybdenum back contact in Cu2ZnSn(S,Se)4 thin-film solar cells10.1021/ja308862n ↗
28. Sulfurization temperature effects on the growth of Cu2ZnSnS4 thin film10.1016/j.cap.2012.01.006 ↗
29. The role of structural properties on deep defect states in Cu2ZnSnS4 studied by photoluminescence spectroscopy10.1063/1.4750249 ↗
30. Why are kesterite solar cells not 20% efficient?10.1016/j.tsf.2012.12.089 ↗
31. Chemical composition dependence of morphological and optical properties of Cu2ZnSnS4 thin films deposited by sol–gel sulfurization and Cu2ZnSnS4 thin film solar cell efficiency10.1016/j.solmat.2010.10.031 ↗
32. Grain size and texture of Cu2ZnSnS4 thin films synthesized by cosputtering binary sulfides and annealing: effects of processing conditions and sodium10.1007/s11664-011-1729-3 ↗
33. Effect of sodium diffusion on the structural and electrical properties of Cu2ZnSnS4 thin films10.1016/j.solmat.2010.12.012 ↗
34. Effects of sodium incorporation in Co-evaporated Cu2ZnSnSe4 thin-film solar cells10.1063/1.4802972 ↗
35. Sodium assisted sintering of chalcogenides and its application to solution processed Cu2ZnSn(S,Se)4 thin film solar cells10.1021/cm403504u ↗
36. On the kinetics of MoSe2 interfacial layer formation in chalcogen-based thin film solar cells with a molybdenum back contact10.1063/1.4794422 ↗
37. Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier10.1063/1.4740276 ↗
38. 12.6% efficient CdS/Cu(In,Ga)S2-based solar cell with an open circuit voltage of 879mV prepared by a rapid thermal process10.1016/j.solmat.2010.11.003 ↗