Interface engineering in chalcopyrite thin film solar devices

Abstract Successful interface engineering requires compositional and electronic material characterization as a prerequisite for understanding and intentionally generating interfaces in photovoltaic devices. The paper gives an overview with several examples, all referring to Cu(In,Ga)(S,Se) 2 (“CIGSSe”)-based solar cells, with an emphasis on characterization using highly specialized methods, such as elastic recoil detection analysis, X-ray emission spectroscopy and photoelectron spectroscopy using synchrotron and ultraviolet light for excitation, inverse photoemission spectroscopy and Kelvin probe force microscopy. First, the determination of the depth profile of the band gap energy E g in the absorber layer is demonstrated. The modification of E g towards both interfaces is discussed in terms of beneficial electronic effects. Next, the interface between absorber and buffer layers with alternative and promising non-toxic materials is considered. Between CIGSSe and a ZnSe buffer deposited by the metalorganic chemical vapor deposition (MOCVD) method a buried ZnS interface was found. For a Zn(O,OH) buffer processed with an ion layer gas reaction (ILGAR) the correlation of surface composition, valence band maximum and efficiency of the resulting solar cell is shown. In addition, another approach is considered where a ZnMgO window layer is sputtered directly on the absorber omitting any buffer layer. The determination of the potential distribution at the ZnMgO/CIGSSe interface supports the understanding of this new and simpler way to get good cell performances even without any buffer. Finally, monolithically integrated solar modules without encapsulation were investigated before and after accelerated aging tests and changes at the interconnects were identified.