Single elementary target-sputtered Cu2ZnSnSe4 thin film solar cells
Source abstract
Abstract
Abstract A simple single elementary target sputtering method is proposed as an alternative to the multi-target sputter approach for preparing Cu2ZnSnSe4 absorber films. Several single targets utilizing excess Cu and Zn, including Cu2ZnSnSe4, Cu2Zn1.5SnSe4, Cu2.5Zn1.5SnSe4 and Cu3Zn1.5SnSe4, were investigated to determine the absorber film with the most promising structural and photovoltaic performance. A conversion efficiency of ~4.16% was obtained from the Cu2.5Zn1.5SnSe4 single target, which displayed well-defined grain structures with desirable Zn/Sn and Cu/(Zn+Sn) ratios. Critical roles of excess Cu and Zn during sputtering are discussed in conjunction with microstructural evolution, elemental distribution, photovoltaic characteristics and grain boundary contributions, which are specified for the sputtering method.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
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