Effect of heat treatment in electrical transport characteristics of graphene-oxide transistor

Abstract The derivatives of graphene are new class of materials with promising applications in modern electronics. In this paper, we reported the effect of heat treatment in electrical transport characteristics of graphene-oxide (GO) transistors. The GO nanoparticles were prepared using modified Hummers method and were characterized with UV–vis spectroscopy, X-ray diffraction, and scanning electron microscopy. Transistor characteristics of GO were studied and the transfer characteristics confirm the p-type semiconducting nature of GO. The mobility was extracted as 0.29 cm 2 V −1 s −1 . The reason for the obtaining lower mobility is due to the existence of oxygenated functional groups in GO basal plane. However, after heat treatment, we obtained an improved conduction which is due to removal of functional groups from GO. This has been evidently proved through our FT-IR results. GO becomes “less hydrophilic” nature and turns into reduced-graphene oxide (rGO) after the heat treatment. Our results show the potential future in the development of futuristic rGO based transistors.