The Effect of Plasmonic Nanoparticles on the Optoelectronic Characteristics of CdTe Nanowires
Source abstract
Abstract
In this work, a simple strategy is proposed to improve the device performance of photodetector by modifying plasmonic nanoparticles onto the surface of semiconductors nanostructure. Both experimental analysis and theoretical simulation show that the plasmonic metal nanoparticles (AuNPs) exhibits obvious localized surface plasmon resonance (LSPR) which can trap incident light efficiently, leading to enhanced photocurrents and improved performance of photoelectronic devices. It is also observed that the AuNPs modified CdTeNW photodetector exhibit apparent sensitivity to 510 nm light, to which pure CdTeNWs is virtually blind. What is more, after AuNPs decoration, the response speed of the photodetector is increased substantially from 6.12 to 1.92 s. It is believed that this result will open up new doors for manipulating light and further improving the efficiency of semiconductor nanostructures based optoelectronic devices.
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Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Gold and Silver Nanoparticles Synthesis and Applications · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices Hefei University of Technology Hefei Anhui 230009 P. R. China
Center of Super‐Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science City University of Hong Kong Hong Kong SAR P. R. China
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