Versatile Dual‐Gate 2D Transistor for Logic‐in‐Memory and Neuromodulation Applications

Abstract Van der Waals heterostructure devices integrating memory and processing functions have been explored to overcome the von Neumann bottleneck. While most of these devices support logic or neuromorphic functionalities, few have demonstrated combined memory, logic, and neuromodulation capabilities. In this work, a dual‐gate van der Waals heterostructure floating‐gate field‐effect transistor with access regions is presented, utilizing molybdenum disulfide as the channel, hexagonal boron nitride as the insulating and tunneling layers, and graphene as the floating gate, that seamlessly integrates memory, logic, and neuromorphic functions in a single device. The transistor exhibits robust memory characteristics, including a large memory window (133 V), excellent retention (≈10 000 s), and high endurance (>500 cycles). Leveraging its dual‐gate architecture, the device demonstrates reconfigurable two‐input logic OR and NOT operations, with tunable gain for NOT logic. The device also emulates key synaptic plasticity mechanisms, including spike‐amplitude, spike‐number, and spike‐duration dependence. Notably, the top gate acts as a modulatory neuron, where positive and negative voltages amplify or suppress synaptic responses, respectively. By integrating memory, logic, and neuromodulation in a single device, this van der Waals heterostructure provides a versatile, energy‐efficient platform for in‐memory logic and neuromorphic applications.