Enhancement and Modeling of Drain Current in Negative Capacitance Double Gate TFET
Source abstract
Abstract
Abstract The drain current improvement in a Negative Capacitance Double Gate Tunnel Field Effect Transistor (NC-DG TFET) with the help of Heterojunction (HJ) at the source-channel region is proposed and modeled in this paper. The gate oxide of the proposed TFET is a stacked configuration of high-k over low-k to improve the gate control without any lattice mismatches. Tangent Line Approximation (TLA) method is used here to model the drain current accurately. The model is validated by incorporating two dimensional simulation of DG-HJ TFET with one dimensional Landau-Khalatnikov (LK) equation. The model matches excellently with the device simulation results. The impact of stacked gate oxide topology is also studied in this paper by comparing the characteristics with unstacked gate oxide. Voltage amplification factor (Av), which is an important parameter in NC devices is also analyzed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (27)
Show source-provided references
1. Mamidala JK, Vishnoi R, Pandey P (2016) Tunnel Field-Effect Transistors (TFET). Wiley, Hoboken, pp i–ix10.1002/9781119246312 ↗
2. Guan Y, Li Z, Zhang W, Zhang Y (2017) IEEE Transactions on Electron Devices 64 (3):93810.1109/TED.2017.2654248 ↗
3. Kumar S, Goel E, Singh K, Singh B, Kumar M, Jit S (2016) IEEE Transactions on Electron Devices 63(8):329110.1109/TED.2016.2572610 ↗
4. Xu HF, Guan BG (2017) Japanese Journal of Applied Physics 56(5):05420110.7567/JJAP.56.054201 ↗
5. Chowdhury N, Azad S, Khosru Q (2014) ECS Transactions 5810.1149/05816.0001ecst ↗
6. Salahuddin S, Datta S (2008) Nano Lett 8(2):40510.1021/nl071804g ↗
7. Chowdhury N, Ahmed I, Fakhrul T, Alam M, Khosru QD, Physica E (2015) Low-dimensional Systems and Nanostructures 74:25110.1016/j.physe.2015.07.004 ↗
8. Xu H, Dai Y (2017) ., vol 3810.1088/1674-4926/38/2/024004 ↗
9. Jiang C, Liang R, Xu J (2017) IEEE Trans Nanotechnol 16(1):58
10. Xu H (2018) Journal of Semiconductors 39(10):10400410.1088/1674-4926/39/10/104004 ↗
11. Hu VPH, Lin HH, Lin YK, Hu C (2020) IEEE Transactions on Electron Devices 67 (6):259310.1109/TED.2020.2986793 ↗
12. Alper C, De Michielis L, Dağtekin N., Lattanzio L, Bouvet D, Ionescu A (2013) Solid-State Electronics 84:205. Selected Papers from the ESSDERC 2012 Conference10.1016/j.sse.2013.02.032 ↗
13. Liu C, Chen PG, Xie MJ, Liu SN, Lee JW, Huang SJ, Liu S, Chen YS, Lee HY, Liao MH, Chen PS, Lee MH (2016) Japanese journal of applied physics 55(4S):04EB0810.7567/JJAP.55.04EB08 ↗
14. Pahwa G, Dutta T, Agarwal A, Chauhan YS (2017) IEEE Transactions on Electron Devices 64(3):136610.1109/TED.2017.2654066 ↗
15. Kane E (1960) J Phys Chem Solids 12(2):18110.1016/0022-3697(60)90035-4 ↗
16. Kumar S, Singh K, Chander S, Goel E, Singh PK, Baral K, Singh B, Jit S (2018) IEEE Transactions on Electron Devices 65(1):33110.1109/TED.2017.2773560 ↗
17. Ahish S, Sharma D, Nithin Kumar YB, Vasantha MH (2016) IEEE Transactions on Electron Devices 63(1):28810.1109/TED.2015.2503141 ↗
18. Choi Y, Hong Y, Ko E, Shin C (2020) Semiconductor Science and Technology 35 (7):07502410.1088/1361-6641/ab8b1f ↗
19. Mittmann T, Michailow M, Lomenzo PD, Gärtner J, Falkowski M, Kersch A, Mikolajick T, Schroeder U (2021) Nanoscale 13:91210.1039/D0NR07699F ↗
20. Muller J, Polakowski P, Mueller S, Mikolajick T (2015) ECS Journal of Solid State Science and Technology 4(5):N3010.1149/2.0081505jss ↗
21. Smaili I (2014) .
22. Carrillo-Nuñez H, Luisier M, Schenk A (2014) .. In: 2014 44th European Solid State Device Research Conference (ESSDERC), pp 118–119
23. Dash S, Mishra GP (2015) Advances in Natural Sciences: Nanoscience and Nanotechnology 6(3):035005
24. Saeidi A, Jazaeri F, Bellando F, Stolichnov I, Enz CC, Ionescu AM (2017) .. In: 2017 47th European Solid-State Device Research Conference (ESSDERC), pp 78–8110.1109/ESSDERC.2017.8066596 ↗
25. Khan AI, Yeung CW, Hu C, Salahuddin S (2011) .. In: 2011 International Electron Devices Meeting, pp 11.3.1–11.3.4
26. Rusu A, Saeidi A, Ionescu AM (2016) Nanotechnology 27(11):11520110.1088/0957-4484/27/11/115201 ↗
27. Mueller S, Muller J, Schroeder U, Mikolajick T (2013) IEEE Transactions on Device and Materials Reliability 13(1):9310.1109/TDMR.2012.2216269 ↗