Comparative Analysis & Study of Various Leakage Reduction Techniques for Short Channel Devices in Junctionless Transistors: A Review and Perspective
Source abstract
Abstract
Leakage current in a MOS device has become a bottleneck with the technological growth of semiconductor industry. As the device is scaled down to sub nano meter regime, leakage current components becomes comparable to that of ON-state current. The focus of this paper is to investigate a detailed comparative analysis of various leakage currents present with or without short channel effects. The overview of the various parameters affecting the leakage currents has been extensively explored. Further, various techniques to minimize the leakage have also been considered. A quantitative analysis of leakage affecting the various short channel devices including the junctionless transistor has been performed and compared.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (83)
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