Performance Analysis of Gate Stack DG-MOSFET for Biosensor Applications
Source abstract
Abstract
In this paper the performance of gate stack metal oxide semiconductor field effect transistor (MOSFET) is investigated with respect to different bio molecules for application as biosensor device. In order to beat the limits of short channel effects (SCEs) the double gate stack MOSFET has been preferred as the proposed device. For biosensor application, dielectric modulation technique has been chosen and effect of different bio molecules like protein, biotin, streptavidin, APTES, etc. are studied to verify the sensitivity as a biosensor for this proposed device. The sensitivity parameter and analog/Rf parameter have been studied for different bio-molecules and a comparative result has been established. The sensitivity of bimolecules located in the cavity side by the oxide region is observed in the variation of threshold voltage and also different analog and RF parameters which can be used for future application in the area of medical science. Two oxide layer one is high k(HfO2) and low k(SiO2) has been used for stacking. For simulations, 2D Sentrausu TCAD simulator has been used.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Nanowire Synthesis and Applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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