journal article·2020-10

III-Nitride/Si Tandem Solar Cell for High Spectral Response: Key Attributes of Auto-tunneling Mechanisms

N. Laxmi, S. Routray, K. P. Pradhan

Silicon· Volume 12· Issue 10
Publisher page

Abstract

The key attributes of double hetero junction tandem solar cell based on III-Nitride alloys and silicon is investigated thoroughly. GaN/InGaN/GaN based tandem solar cells are predicting impressive efficiency, however due to its high cost; it is far from immediate implementation. Hence, an attempt is made to realize GaN/InGaN on crystalline silicon(c-Si) substrate that results in high spectral efficiency and cost effectiveness. The proposed multi-junction tandem solar cell consists of a GaN layer, intrinsic-InxGa1−xN (i-InGaN), tandem InxGa1−xN (t-InGaN) upon crystalline p-silicon and n-silicon layers. Energy band diagrams, current-voltage curve, power graph, electric field and potential graphs are explored using TCAD tool. Additionally, key parameters such as ’In’ content, thickness of layers, absorption coefficients, polarization charges are optimized. A remarkable conversion efficiency of 25.6% and 26.1% are achieved with & without polarization effect, respectively and became a potential candidate for next-generation photovoltaics applications.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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