Design of Dual-Gate P-type IMOS Based Industrial Purpose Pressure Sensor
Source abstract
Abstract
In this treatise, we have proposed a Single Material Gate–Dual Gate Impact Ionization Metal Oxide Semiconductor (SMG DG-IMOS) based Pressure Sensor. The pressure sensor has the most notable role in both the electrical and mechanical emerging fields. This article grants the outline and scrutiny of pressure sensors on SMG-DG IMOS technology. The proposed device uncovers the hypothetical and practical concepts that can be effective for the future pressure sensor. Different ranges of bending: Low, Medium and High, have been employed to the proposed pressure sensor device. Several performance parameters under the ranges of bending have been investigated. The device structure has been developed with SiO2 as the gate oxide, a gate metal with work function 4.26 eV and a gate length of 130 nm while proposing the IMOS based pressure sensor design. The proposed sensor design is then investigated for different metals to explore the compatibility of the IMOS structure for different ranges of bending. The optimization of the proposed IMOS based pressure sensor has been carried out for broad sensing range and better sensitivity.
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Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Analytical Chemistry and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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