An Impedance-matched Common-gate Differential Quad-band Terahertz Detector
Source abstract
Abstract
Compared with single-band terahertz detectors, multi-band terahertz detectors can significantly improve the contrast and readability of terahertz imaging, and thus they represent an important research direction for terahertz detectors. The noise equivalent power (NEP) of existing multi-band terahertz detectors is still far from that of single-band detectors. In this study, we designed and implemented a quad-band terahertz detector based on a 180-nm complementary metal oxide semiconductor process. The detector consists of a quad-band terahertz on-chip antenna, a common-gate differential N-type metal oxide semiconductor sensor, and an impedance matching circuit. Experimental results show that the detector achieves an NEP of less than 100 ( ext {pW}{/}sqrt { ext {Hz}}) in the three operating bands.
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Research context
OpenAlex topics: Terahertz technology and applications · Superconducting and THz Device Technology · Photonic and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
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