Improvement of a Novel SOI- MESFET with an Embedded GaN Layer for High-Frequency Operations

In this paper, we propose a novel Silicon on Insulator (SOI) Metal Semiconductor Field Effect Transistor (MESFET) with an embedded GaN layer (GL-SOI-MESFET) for modifying the electric field distribution. The main idea of this work is based on using a high breakdown field material (GaN), for amending the electric field and potential distribution near the drain region, and as a result, the breakdown voltage of the proposed structure will be higher than a conventional structure (C-SOI-MESFET). The breakdown voltage (VBR) of the GL-SOI-MESFET at the Ids = 55 mA/mm and Vgs = − 1 V has been achieved ~21 V whereas the VBR in the C-SOI-MESFET is 16 V. The proposed structure shows the improvement of DC and RF characteristics versus the C-SOI-MESFET. For obtaining the best results to improve the structure performance, dimensions of the GaN layer have been optimized. Also, by amending potential distribution and changing the depletion region between the gate and drain sides, the gate-drain capacitance reduces. The effects like the electric field, the potential distribution, breakdown voltage, the kink effect, the self-heating effect, power gains, and parasitic capacitances are investigated and the proposed structure results have superior DC and radio frequency (RF) performances compared with the conventional MESFET structure.