The Simulated Effects of Different Light Intensities on the SiC-Based Solar Cells
Source abstract
Abstract
In this study, a computer-aided simulation of the homo-junction thin films of solar cell was presented. Different solar cell structures PN and PIN based on 3C-SiC have been studied and the effects of the illumination intensity on the electrical properties of these solar cells such as: the short- circuit current density (Jsc), the open circuit voltage (Voc), the factor (FF) and photovoltaic conversion efficiency (η) were investigated. The numerical simulations were performed at different conditions of illumination : 90mW.cm− 2, 100mW.cm− 2and 135mW.cm− 2, under absolute temperature T = 300 K. The results have demonstrated that the maximum electrical conversion efficiency of about 23.24 % and 23.41% for PN and PIN junction, respectively, which makes the two proposal structures suitable as photovoltaic (PV) solar cell applications.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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