A Generalized Analytical Approach to Model the Gate Tunneling Current in Nanoscale Double Gate MOSFETs
Source abstract
Abstract
An analytical model for gate tunneling current in a nanoscale double gate (DG) metal oxide semiconductor field effect transistor (MOSFET) has been developed. The model is simple and generalized one and is based on our earlier work on gate tunneling current in single gate MOSFET, i.e., treating the band profile in the channel as a triangular potential well. The potential distribution in the silicon body is determined through a perturbation approach which facilitates analytical solution to Poisson’s equation considering the contributions from both inversion and depletion charges. Looking at the dimension of the MOSFET apart from electrical confinement the effect of structural confinement has also been taken into account. The estimated tunneling current density in the present model compares well with the results of L. Chang et al.
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Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis
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