Analytical Model and Mechanism of a Linear Extended Gate for Lateral Internal Superjunction Power Devices
Source abstract
Abstract
The analytical model and mechanism of a linear extended gate (LEG) for internal superjunction lateral double-diffused metal-oxide semiconductor (LEG-ISJ LDMOS) is developed in this paper. The LEG-ISJ structure features a LEG structure on the top of the device that connects two back-to-back diodes on the right. An accumulation layer with high electron density can be formed by the LEG to increase the drift region current density in the ON-state. Besides, the surface electric field of the LEG is modulated by semiconductor insulator semiconductor (SIS) structure in the OFF-state. Meanwhile, the superjunction below the drift region introduces a new current conduction path. The current of the LEG-ISJ is obtained by solving the Current density’s equation. The simulation results are in good agreement with the analytical model. An extremely low specific ON-resistance (RON,sp) of 5.88 mΩ·cm2 and a high breakdown voltage (BV) of 416 V are realized. Therefore, an extremely high FOM = BV2/RON,sp of 29.43 MW/cm2 is obtained for the LEG-ISJ LDMOS.
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Research context
OpenAlex topics: HVDC Systems and Fault Protection · Superconducting Materials and Applications · Silicon Carbide Semiconductor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
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