The Heat Capacity of Si, Ge, GaAs and InP Semiconductors at High Temperatures
Source abstract
Abstract
The Debye model for the specific heat is changed keeping all the assumptions except that each mode is treated here as distorted quantum harmonic q-oscillator. It also takes into account the optical branches. The specific heat of the network is evaluated within low and high temperatures. The specific heat is studied in the case of semiconductor metals Si, Ge, GaAs and InP. The lattice heat capacities for different metals are calculated using Mathematica simulation.
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Research context
OpenAlex topics: Photonic and Optical Devices · Photonic Crystals and Applications · Surface and Thin Film Phenomena
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References (11)
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