Qualitative Analysis of Dual Material Gate (SiO2/HfO2) Underlapped on Drain Side TFET (DMGUD-TFET) Using Work Function Engineering
Source abstract
Abstract
In this paper, we propose Dual Material Gate underlapped on drain side with symmetrical three regions of Tunnel Field Effect Transistor (DMGUD-TFET) have been designed and demonstrated. The DMGUD -TFET device is made of potential semiconductor materials being Silicon Dioxide (SiO2) and Hafnium oxide (HfO2) and the bottom gate underlapped on the drain side with three different materials being consisting of Titanium Dioxide (TiO2), Silicon Dioxide (SiO2), and Hafnium Oxide (HfO2). The innovative TFET device is invented by Silvaco TCAD ATLAS with device dimensions of 60 nm and a dual Gate length of 10 nm modernizations. The bottom Gate underlapped on the drain side will reduces the source-to-drain resistance and increases the band-to-band tunnelling breadth. The suggested DMGUD-TFET uses the same work functions being 4.8 eV in Silvaco ATLAS tool. The proposed DMGUD-TFET structure increases the analog parameters being Transconductance compared to single gate TFETand which is prominent future for Internet of Things(IoT) applications.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Nanowire Synthesis and Applications
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References (23)
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