Recent Advancements in Wide Band Semiconductors (SiC and GaN) Technology for Future Devices
Source abstract
Abstract
Wide bandgap (WBG) semiconductor materials have the capability of making power electronic components with a smaller size, faster switching speed, more reliability, and greater efficiency than their silicon-based counterparts. Real progress in the field of power electronics occurred when WBG devices came into use. Reportedly, among the various WBG semiconductors, gallium nitride (GaN) and silicon carbide (4 H-SiC) are perceived for the future of power electronics as excellent materials. The purpose of this chapter is to analyze some recent progress in WBG semiconductor power devices (e.g. diodes, MOSFETs, HEMTs, etc.). The emphasis is made on particularly important issues, such as SiC MOSFETs channel mobility, ohmic contacts in SiC devices, and the strategies for normally-off GaN HEMTs. An outline of the key challenges and a brief insight into the upcoming aspects of ultra-high-voltage SiC devices and GaN vertical devices has been provided in the end.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (28)
Show source-provided references
1. Power-Management (2016) Sam Davis Banner. http://electronicdesign.com/powermanagement
2. Roccaforte F, Giannazzo F, Iucolano F, Eriksson J, Weng MH, Raineri V (2010) Surface and interface issues in wide band gap semiconductor electronics. J Appl Surf Sci. https://doi.org/10.1016/j.apsusc.2010.03.09710.1016/j.apsusc.2010.03.097 ↗
3. Efficient power conversion, https://epc-co.com/epc
4. Fabrizio Roccaforte P, Fiorenza G, Greco RL, Nigro F, Giannazzo F, Iucolano M, Saggio (2018) Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices. J Microelectron Eng. https://doi.org/10.1016/j.mee.2017.11.02110.1016/j.mee.2017.11.021 ↗
5. Meneghini M, Meneghesso G, Zanoni E (2017) Power GaN Devices - Materials, applications, and reliability. Springer International Publishing, Cham. https://doi.org/10.1007/978-3-319-43199-410.1007/978-3-319-43199-4 ↗
6. Millán PJosé, Prof. Philippe Godignon & Amador Pérez-Tomás (2012), Wide band gap semiconductor devices for power electronics. Automatika 53:2:107–116. https://doi.org/10.7305/automatika.53-2.17710.7305/automatika.53-2.177 ↗
7. Infineon Technologies AG, http://www.infineon.com
8. Afanas’ev VV, Ciobanu F, Dimitrijev S, Pensl G, Stesmans A (2004) J Phys: Condens Matter 16:S1839–S1856
9. Arnold E, Alok D (2001) Effect of interface states on electron transport in 4H-SiC inversion layers. IEEE Trans Electron Devices 48:1870–187710.1109/16.944171 ↗
10. Lelis AJ, Green R, Habersat DB, El M (2015) Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs. IEEE Trans Electron Devices 62:316–32310.1109/TED.2014.2356172 ↗
11. Kimoto T, Cooper J (2014) Fundamentals of silicon carbide technology: growth, characterization, devices and applications. Wiley, Singapore Pte. Ltd10.1002/9781118313534 ↗
12. Ambacher O, Foutz B, Smart J, Shealy JR, Weimann NG, Chu K, Murphy M, Sierakowski AJ, Schaff WJ, Eastman LF, Dimitrov R, Mitchell A, Stutzmann M (2000) J Appl Phys 87:33410.1063/1.371866 ↗
13. Mohanbabu A, Mohankumar N, Godwin Raj D, Sarkar P, Saha SK (2017) Superlattice Microst 103:270. https://doi.org/10.1016/j.spmi.2017.01.04310.1016/j.spmi.2017.01.043 ↗
14. Tripathy S et al (2012) Appl Phys Lett 101:082110. https://doi.org/10.1063/1.474675110.1063/1.4746751 ↗
15. Chen KJ et al (2017) GaN-on-Si power technology: devices and applications. IEEE Trans Electron Devices. https://doi.org/10.1109/TED.2017.265757910.1109/TED.2017.2657579 ↗
16. Hashizume T, Nishiguchi K, Kaneki S, Kuzmik J (2018) Materials science in semiconductor processing, review paper (in press) https://doi.org/10.1016/j.mssp.2017.09.02810.1016/j.mssp.2017.09.028 ↗
17. Roccaforte F, Greco G, Fiorenza P (2018) Processing issues in SiC and GaN power devices technology: The cases of 4H-SiC planar MOSFET and recessed hybrid GaN MISHEMT. 2018 International Semiconductor Conference (CAS), Sinaia, , pp 7–16. https://doi.org/10.1109/SMICND.2018.853975610.1109/SMICND.2018.8539756 ↗
18. Saito W, Takada Y, Kuraguchi M, Tsuda K, Omura I (2006) Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications. IEEE Trans Electron Devices. https://doi.org/10.1109/TED.2005.86270810.1109/TED.2005.862708 ↗
19. Cai Y, Zhou Y, Lau KM, Chen KJ (2006) Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: from depletion mode to enhancement mode. IEEE Trans Electron Devices. https://doi.org/10.1109/TED.2006.88105410.1109/TED.2006.881054 ↗
20. Hwang I et al (2013) p-GaN gate HEMTs with tungsten gate metal for high threshold voltage and low gate current. IEEE Electron Device Lett. https://doi.org/10.1109/LED.2012.223031210.1109/LED.2012.2230312 ↗
21. Systems GaN, https://www.gansystems.com
22. Panasonic, https://eu.industrial.panasonic.com/products/semiconductors/gan-power
23. Greco G, Iucolano F, Di Franco S, Bongiorno C, Patti A, Roccaforte F (2016) Effects of annealing treatments on the properties of Al/Ti/p-GaN interfaces for normally OFF p-GaN HEMTs. IEEE Trans Electron. https://doi.org/10.1109/TED.2016.256349810.1109/TED.2016.2563498 ↗
24. Fiorenza P, Greco G, Iucolano F, Patti A, Roccaforte F (2017) Channel mobility in GaN Hybrid MOS-HEMT using SiO2 as gate insulator. IEEE Trans Electron Devices. https://doi.org/10.1109/TED.2017.269978610.1109/TED.2017.2699786 ↗
25. Haijiang, Yu et al (2005) Ion implanted AlGaN-GaN HEMTs with non-alloyed Ohmic contacts. IEEE Electron Device Lett. https://doi.org/10.1109/LED.2005.84658310.1109/LED.2005.846583 ↗
26. Seo H-C, Patrick Chapman, Hyun-Ick Cho, Jung-Hee Lee, and Kyekyoon (Kevin) Kim (2008) Ti-based non alloyed Ohmic contacts for Al0.15Ga0.85N∕GaN high electron mobility transistors using regrown n+-GaN by plasma-assisted molecular beam epitaxy. J Appl Phys Lett 93:102102. https://doi.org/10.1063/1.297970210.1063/1.2979702 ↗
27. Firrincieli A, De Jaeger B, You S, D.Wellekens MV, Hove S, Decoutere (2014) Jpn J Appl Phys 53(2014):04EF01. https://doi.org/10.1116/1.495240310.1116/1.4952403 ↗
28. Greco G, Iucolano F, Roccaforte F (2016) Ohmic contacts to Gallium Nitride materials. J Appl Surf Sci 383:324–345. https://doi.org/10.1016/j.apsusc.2016.04.01610.1016/j.apsusc.2016.04.016 ↗