Comment on ‘A compact drain current model of short-channel cylindrical gate-all-around MOSFETs’
Source abstract
Abstract
Based on an analytical expression for tetragonal gate-all-around (GAA) MOSFET and the rotational symmetry, Tsormpatzoglou et?al (2009 Semicond. Sci. Technol. 24 075017) have proposed a fully analytical potential model of short-channel cylindrical GAA MOSFET which is valid in the weak inversion region. The authors also presented analytical expressions for the drain current, threshold voltage, subthreshold swing, drain-induced barrier lowering. The model presented by the authors is a significant contribution, but some of the analytical expressions/derivations presented in Tsormpatzoglou et?al (2009 Semicond. Sci. Technol. 24 075017) need modification/correction, and are pointed out in this comment.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Silicon Carbide Semiconductor Technologies
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References (4)
Show source-provided references
1. Tsormpatzoglou A · Semicond. Sci. Technol. · 2009 · 24
2. 10.1109/TED.2007.90107510.1109/TED.2007.901075 ↗
3. 10.1109/LED.2004.83190210.1109/LED.2004.831902 ↗
4. 10.1016/j.sse.2007.06.01810.1016/j.sse.2007.06.018 ↗