Properties of p-n-junctions formed by a laser irradiation of a surface of n-Cd_1−xZn_xTe single crystal

Photosensitive barrier structures were fabricated by high-power pulsed laser irradiation of a freshly-cleaved surface of п -type bulk Cd 1− x Zn x Te substrates. Their electrical properties were investigated and discussed. Dominant carrier mechanisms at a forward and a reverse bias in terms of a recombination and tunnel-recombination model were analyzed. At the illumination reaching 100 mW · cm −2 , these surface-barrier р- Cd 1− х Zn х Te/ п -Cd 1− х Zn х Te structures were possessed by the following photoelectric parameters: open-circuit voltage V oc = 0.61 V, short-circuit current I sc = 0.21 mА and fill factor FF = 0.49, respectively.