Temperature dependence of photoreflectance measurements in InAs epitaxial layers
Source abstract
Abstract
Photoreflectance (PR) spectra were measured for different temperatures within the range from 78 K to 287 K. The obtained PR spectra of both LPE and VPE grown samples measured at different temperatures show Franz-Keldysh oscillations near the bandgap . These spectra are well fitted with the cosine function approximation. The behaviour of with temperature is shown to be temperature-range dependent. varies linearly with temperatures above 150 K while this is not the case when T falls below 150 K. The obtained values for the energy bandgap , the temperature coefficient and the spin-orbit splitting are compared with the published data in the literature.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Photonic and Optical Devices
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