Electronic properties of Ga(In)As-based heterostructures
Source abstract
Abstract
The authors report theoretical results pertaining to the electronic properties of Ga(In)As-based quantum wells and superlattices. The focus is on a comparison between the Ga0.47In0.53As-InP and Ga0.47In0.53As-Al0.48In0.52As systems where the well-acting material is the same, the barrier-acting materials are very similar but where the conduction band offsets are very different ( approximately=0.24 and 0.44 eV respectively). Features of electron and hole energy levels as well as scattering lifetimes are discussed.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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