Two-dimensional mapping of implantation and annealing phenomena in GaAs by photoinduced microwave reflectometry

GaAs wafers processed through various stages of active channel formation are characterised by photoinduced microwave reflectometry using 2D maps. A parasitic waveguiding phenomenon is corrected by post-measurement signal processing. Results similar to those seen in previous experiments are repeated, while the added sensitivity of an improved system reveals implant damage, annealing effects and EL2 loss associated with activation. Point defect interactions during the quench of the activation anneal dominate the observed changes in the measurement.