Bound excitons in GaP under pressures up to 10 GPa
Source abstract
Abstract
Excitons bound to isoelectronic centres (single atom nitrogen, nitrogen pairs) in GaP were investigated in detail from luminescence spectra under pressures of up to 10 GPa and temperatures of 1.7-100 K. A strong nonlinear dependence of EN,NNi(p) was observed. Excitons approaching the band edge under pressure become free or bound to donors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · GaN-based semiconductor devices and materials
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References (3)
Show source-provided references
1. 10.1103/PhysRevB.29.339810.1103/PhysRevB.29.3398 ↗
2. Zhao Xue-shu · Chin. Phys. Lett. · 1984 · 1 · 1510.1088/0256-307X/1/1/005 ↗
3. Wang Bingshen · Chin. Phys. Lett. · 1986 · 3 · 27710.1088/0256-307X/3/6/010 ↗