Rapid thermal annealing of ion-implanted GaAs
Source abstract
Abstract
A review of recent results concerning the behaviour of ion implanted GaAs following rapid thermal annealing is presented. In particular, the use of dual implants to reduce the effects of diffusion and to improve the peak carrier concentration is discussed. Progress in modelling the annealing process is also examined. It seems likely that the diffusion of gallium or arsenic atoms is important for the annealing process to proceed.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and devices · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (15)
Show source-provided references
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