Diffusion and recombination of photocarriers in Ge and GaAs
Source abstract
Abstract
The dynamical behaviour of carriers in highly photo-excited Ge and GaAs is investigated by far-infrared magneto-absorption and photoconductivity measurement. The authors observe far-infrared absorption due to hot holes in electron-hole gas in Ge and extension of carrier lifetime by impact-ionization of impurities in GaAs.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advancements in Semiconductor Devices and Circuit Design · Thin-Film Transistor Technologies
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References (1)
Show source-provided references
1. 10.1103/PhysRevLett.53.218110.1103/PhysRevLett.53.2181 ↗