Electrical transport and depletion region in dry-etched Si-based nanostructures

We fabricated p + ‐p‐p + junctions in order to properly investigate the electrical conduction across a boron implanted silicon-on-insulator (SOI) nanostructured pattern, like photonic crystals and shallow-etched trenches. By analysis of the I‐V measurements, we demonstrate that a depletion region is present and it is induced by the dry etching process of reactive ion etching. This depletion region does not depend on the geometry of the dry-etched nanostructure, but on the doping level of the substrate. (Some figures may appear in colour only in the online journal)