An overview of HgCdTe MBE technology
Source abstract
Abstract
The progress of HgCdTe MBE technology has been very significant over the last two to three years. In this overview paper, the authors first discuss the state-of-the- art HgCdTe MBE systems, then review the structural, optical and electrical properties of MBE-grown HgCdTe layers that are available today. In addition, various kinds of devices that have been fabricated with MBE-grown HgCdTe are described. Finally they discuss future directions and challenges to the perfection of HgCdTe MBE technology for focal plane applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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Show source-provided references
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