Fabrication of Cu 2 O/Si nanowires photocathode and its photoelectrochemical properties
Source abstract
Abstract
Abstract Using a simple dipping method, Cu 2 O nanoparticles were successfully deposited on the surface and the sidewall of silicon nanowires (Si NWs). As a photocathode, the Cu 2 O/Si NWs composites not only show a low reflectance of 10.75% in the 300–900 nm wavelength range, but also can enhance the separation of the photogenerated electron–hole pairs due to the junction formed by Cu 2 O and Si NWs. The Cu 2 O/Si NWs-20 min photocathode achieved a photocurrent of 3.5 mA cm −2 at −0.8 V versus AgCl/Ag and a photoconversion efficiency of 1.2%.
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Research context
OpenAlex topics: Copper-based nanomaterials and applications · Electronic and Structural Properties of Oxides · ZnO doping and properties
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