Pressure dependence of optical absorption in GaAs at 77 K
Source abstract
Abstract
Optical absorption measurements on GaAs have been made as a function of pressure up to 100 kbar at 77 K. A low-energy tail in the absorption spectrum is observed above 40 kbar, which is attributed to the Gamma -X indirect optical transitions. This leads to a determination of the pressure dependence of the indirect band gap. The effects of high doping on the absorption spectra are also investigated.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Optical properties and cooling technologies in crystalline materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (8)
Show source-provided references
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