Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage

Abstract High performance GaN-based micro-light-emitting diodes (µLEDs) with epitaxial n-InGaN/n-GaN tunnel junctions (InGaN TJs) were grown by metalorganic chemical vapor deposition (MOCVD). The InGaN TJs µLEDs show a significant reduction of forward voltage (V _f ) by ∼0.6 V compared to the common TJs µLEDs. The V _f at 20 A cm ⁻² is very low varied from 3.15 V to 3.19 V in small InGaN TJ µLEDs with a size less than 40 × 40 µ m ² , and then significantly increases in large LEDs. Selective area growth (SAG) of TJs can overcome such size limitation by vertical out diffusion of hydrogen through the apertures on top of p-GaN. The InGaN TJ µLEDs overgrown by SAG show a size-independent low V _f ranged from 3.08 V to 3.25 V. The external quantum efficiency (EQE) of the packaged TJ µLEDs was improved by 6% compared to the common µLEDs with indium tin oxide (ITO) contact. This work solves the key challenges of MOCVD-grown TJs.